ROHM has integrated VCSEL technology with MOSFET drivers in a module to achieve the shorter pulses and high output required for more accurate sensing. Conventionally, in VCSEL-equipped laser light ...
Abstract: Gate driver for 6.5kV /25A Silicon Carbide (SiC) MOSFET module, which features low coupling capacitance, is proposed in this paper. In contrast to 6.5 kV Silicon (Si) IGBT module, 6.5 kV SiC ...
IXYS Colorado announced its new series, the IXZ631, an integrated high-speed gate driver and MOSFET RF modules featuring very low insertion inductance and isolated substrate. The product is designed ...
Optimized for high bus voltage applications, these devices are designed to handle bus voltages exceeding 1000V. The power pins of the series are thickened to 2mm, enabling the devices to carry higher ...
Toshiba: MG250YD2YMS3, the industry's first 2200V dual silicon carbide(SiC) MOSFET module. (Graphic: Business Wire) Kawasaki, Japan (ANTARA/Business Wire)- Toshiba Electronic Devices & Storage ...
Abstract: This paper investigates an active gate driver for a large capacity multi-chip SiC-MOSFET power module. The active gate driver utilizes the reactive voltage of the source wire inductance as ...
(IN BRIEF) Infineon Technologies has announced the expansion of its CoolSiC 1200 V and 2000 V MOSFET module families with a new industry-standard package. This package, based on advanced M1H silicon ...
Step 0 — Parts & pin choices LED strip (+12 V), 12 V PSU MOSFET driver module (your dual-channel board; we’ll use CH1) ESP32 pins LED PWM → GPIO 25 (to module IN1) SW1 → GPIO 4 (other leg to GND) All ...
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