Chipmakers are ramping up their 16/14nm finFET processes, with 10nm finFETs expected to ship sometime in late 2016 or early 2017. So what’s next? The foundries can see a path to extend the finFET ...

Just two years after developing a 7nm chip with 20 billion transistors, IBM has taken the wraps off technology that will usher in smaller, 5nm chips with higher performance and greater efficiency. IBM ...

First of two parts: New materials and transistors could extend Moore’s Law to 1.5nm or beyond, but there are a lot of problems ahead and a lot of unanswered questions. As leading-edge chipmakers ...

IBM and its Research Alliance partners GLOBALFOUNDRIES and Samsung, and equipment suppliers have developed an industry-first process to build silicon nanosheet transistors that will enable 5 nanometer ...

IBM Research Alliance recently announced that they’ve developed a process to produce the world’s first 5nm transistors. The new transistors will allow IBM to squeeze as much as 30 billion transistors ...

TSMC’s N3 technology will continue to use FinFET technology, the same transistor structure used today. By contrast, Samsung Foundry will switch to gate-all-around (GAAFET) transistor structure with ...

IBM and its key research partners managed to create a new type of a transistor that could theoretically fit 30 billion times into a 5-nanometer chip, which it also developed a manufacturing process ...

ALBANY, N.Y., June 5, 2017 /PRNewswire/ -- IBM (NYSE: IBM), its Research Alliance partners GLOBALFOUNDRIES and Samsung, and equipment suppliers have developed an industry-first process to build ...

ALBANY, NY - 05 Jun 2017: IBM (NYSE: IBM), its Research Alliance partners GLOBALFOUNDRIES and Samsung, and equipment suppliers have developed an industry-first process to build silicon nanosheet ...

Announced at the 2017 Symposia on VLSI Technology and Circuits conference in Kyoto, Japan, IBM and its research alliance partners, GlobalFoundries and Samsung described a 5 nm transistor. This silicon ...