Researchers at Berkeley Lab, using a trio of single-atom-thick wonder materials -- graphene, boron nitride, and molybdenite -- have created the first all-2D field-effect transistor. This FET could ...
(Nanowerk News) Smartphones, laptops and smartwatches consume vast quantities of energy, yet only around half of this energy is actually used to power important functions. And with billions of these ...
Squeezing the right amount of potassium ions between the atomic layers of molybdenum disulfide can turn it from a semiconductor into a metal, superconductor or insulator Figure 1: A photograph of the ...
Gate-All-Around (GAA) transistors will be one of the chip industry’s biggest design inflections since the introduction of FinFETs in 2010. Innovations in materials engineering provide GAA transistors ...
After dominating the electronics industry for decades, conventional silicon-based transistors are gradually approaching their ...
A RIKEN study shows that squeezing the right amount of potassium ions between the atomic layers of molybdenum disulfide can turn it from a semiconductor into a metal, superconductor or insulator. The ...
SANTA CLARA, Calif., May 26, 2022 (GLOBE NEWSWIRE) -- Applied Materials, Inc. today introduced a new system that re-engineers the deposition of transistor wiring to significantly reduce electrical ...
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