IEEE

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-/spl mu/m SiGe BiCMOS process

Abstract: This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe ...
IEEE

Novel diode structures and ESD protection circuits in a 1.8-V 0.15-/spl mu/m partially-depleted SOI salicided CMOS process

Abstract: Due to the low thermal conductivity of the buried oxide underneath the thin-film silicon layer and the shallow-trench-isolation (STI) structure on the insulating layer, electrostatic ...
Scientific Research Publishing

A Comparison Study of Input ESD Protection Schemes Utilizing NMOS, Thyristor, and Diode Devices ()

For three fundamental input-protection schemes suitable for high-frequency CMOS ICs, which utilize protection devices such as NMOS transistors, thyristors, and diodes, we attempt an in-depth ...
Electronic Design

TVS Diode Arrays Provide 40 Percent Greater Protection Against ESD and Lightning-Induced Surges

Littelfuse, Inc. has introduced the SRDA3.3 Series TVS Diode Array - SPA® Diodes. Littelfuse, Inc. has introduced the SRDA3.3 Series TVS Diode Array - SPA® Diodes. The SRDA3.3 Series integrates ...
EDN

TVS Diode Array from Littelfuse Provides Five Channels of ESD Protection in Footprint that Typically Contains Only One

Littelfuse has introduced the (SPA® Diodes), a miniature, five-channel 6.5pF, 15kV bidirectional TVS array for general-purpose electrostatic discharge (ESD) protection. The SP1012 Series packs five ...
Electronic Design

New Diode Pair Shield High-Speed Ports From ESD

Said to protect USB 2.0, Firewire, Gigabit Ethernet and other high-speed data ports from ESD without sacrificing data rates or signal quality, the PicoGuard CM1210 family provides up to ±6 kV contact ...