Abstract: Leakage power and input pattern dependence of leakage for extremely scaled (L/sub eff/=25nm) double-gate (DG) circuits are analyzed, compared with those of conventional bulk-Si counterpart.
Basic CMOS Circuits Simulated with LTspice This repository contains simulations of basic CMOS (Complementary Metal-Oxide-Semiconductor) logic circuits using LTspice. It includes the implementation of ...
CMOS devices have large input impedance with input currents on the order of 0.01nA. Adding feedback circuitry can result in a latch-like device that can be used to store bits, and also operate in a ...
Abstract: In this work, a high-speed full swing driver for large capacitive-loads for low-voltage CMOS applications is presented. The driver which has multi-path for driving the load has a low gate ...
Despite massive, large-scale integration being ubiquitous in contemporary electronic design, discrete MOSFETs in the classic CMOS totem pole topology are still sometimes indispensable. This makes tips ...