SiC is extensively used in microelectronic devices owing to its several unique properties. However, low yield and high cost of the SiC manufacturing process are the major challenges that must be ...
A technical paper titled “In situ electrical property quantification of memory devices by modulated electron microscopy” was published by researchers at Hitachi High-Tech Corporation, KIOXIA ...
The perpetual march toward smaller features, coupled with growing demand for better reliability over longer chip lifetimes, has elevated inspection from a relatively obscure but necessary technology ...
Light diffraction limits the ability of conventional optical microscopes to identify features smaller than 200 nanometers. Defect identification is made more difficult by the sophisticated 3D ...
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