The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high icnput impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS input ...

Compared with GTOs and IGCTs, IGBT modules offer the advantage of easier driving due to the MOS-gate and easier cooling due to a fully isolated package. Traction, industrial drive, and pulse power ...

TOKYO, January 14, 2025--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as ...

Recent developments in IGBT and FWD (free wheeling diode) devices are enabling designers to achieve higher switching performance, lower electrical losses, and higher temperature operation in high ...