WASHINGTON, D.C., June 6, 2017 -- A team of researchers at the Israel Institute of Technology has developed a new capacitor with a metal-insulator-semiconductor (MIS) diode structure that is tunable ...

Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...