Donga Science

Ferroelectric transistor design promises major power savings for future NAND flash

As the scale of artificial intelligence (AI) models grows rapidly, securing the performance of memory semiconductors has ...
EDN

Flip-Flop Using CMOS NAND Gates

Using just two NAND or inverter gates its possible to build a D type (or ‘toggle’) flip-flop with a push-button input. At power-up the output of gate N2 is at a logical ‘1’, ensuring that transistor T2 ...
Ars Technica

Samsung’s “3D Vertical” NAND crams a terabit on a single chip

SSD enthusiasts know all about SLC, MLC, and TLC, but there are some new acronyms in SSD town: V-NAND and CTF. Samsung announced in a press release last night that it has begun mass production of “3D ...
EDN

Samsung Electronics Develops First 16-Gigabit NAND Memory Using 50-nm Technology for Sharp Jump in Mobile Storage CapacitySamsung Electronics Develops First 16-Gigabit NAND Memory

Samsung Electronics Develops First 16-Gigabit NAND Memory Using 50-nm Technology for Sharp Jump in Mobile Storage CapacitySamsung Electronics Develops First 16-Gigabit NAND Memory Samsung Electronics ...
Nanowerk

Printed organic transistors achieve record performance and 3D circuit density

(Nanowerk Spotlight) Organic semiconductors have long held promise for enabling deformable electronic devices that can be manufactured at low cost and high volumes using printing techniques. However, ...
Ars Technica

Intel is keeping Moore’s Law alive by making bigger improvements less often

Intel took half a day this week to talk about processor manufacturing technology. The company still believes in Moore's Law and says the principle will continue to guide and shape the microchip ...
Computerworld

Today’s NAND flash has hit a development dead-end

The NAND flash technology that Toshiba introduced in 1989, making thumb drives, SSDs and your smartphone’s memory possible, has finally reached a development dead end. Toshiba and other major ...