The interface at which p-type silicon and n-type silicon make contact with each other. At this coupling point, free electrons (n-type) and holes (p-type) cancel each other and form a "depletion zone" ...

Abstract: The motion of electrons and holes is considered in relation to the PN junction and it in turn is considered in relation to the junction transistor. Electrical properties, equivalent circuit ...

This chapter explains the first commercialised transistors, the bipolar junction transistor (BJT) developed in the 1950s at Bell Labs and the junction field‐effect transistor (JFET) developed about 10 ...

A recent study published in Light: Science & Applications introduced a new method for determining the PN junction depth in a silicon wafer. This technique works at nanometer-scale resolution and is ...

A transistor – a word blend of "transfer" and "resistor" – is a fundamental component of today's advanced electronics. Essentially, a transistor, as one of the foundational elements of modern ...

Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect ...