Static Random-Access Memory (SRAM) has been a key element for logic circuitry since the early age of the semiconductor industry. The SRAM cell usually consists of six transistors connected to each ...
A new technical paper titled “Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors” was published by researchers at The Pennsylvania State ...
In a recently published article in IEEE Electron Devices Magazine the authors, I was one of them, looked at the impact of external magnetic fields on spin tunnel torque magnetic random-access memories ...
New York, US, Aug. 06, 2021 (GLOBE NEWSWIRE) -- SRAM Market Overview: According to a comprehensive research report by Market Research Future (MRFR), “Global SRAM Market information by Type, Memory ...
DUBLIN--(BUSINESS WIRE)--Research and Markets (http://www.researchandmarkets.com/research/2113be/static_random_acce) has announced the addition of the "Static Random ...
IBM Research has been working on new non-volatile magnetic memory for over two decades. Non-volatile memory is wonderful for retaining data without power, but it is extremely slow, and does not last ...
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