Time-dependent dielectric breakdown (TDDB) testing is an indispensable step in qualifying semiconductor gate-oxide integrity, and vendors are responding with the instrumentation and probing ...
Abstract: Here we demonstrate the copper/dielectric TDDB improvement of 8 metal layers in 28nm technology node with 90 nm pitch. After the process optimization, the Weibull slope of MOM TDDB increase ...
Abstract: Impact of self-heating effect (SHE) has been studied on FinFET devices under dynamic stress. A large channel temperature increase is observed under On-State stress which leads to degradation ...
SANTA BARBARA, Calif.--(BUSINESS WIRE)--Oxford Instruments Asylum Research today announces the release of its new nanoscale time-dependent dielectric breakdown (nanoTDDB) high voltage accessory for ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback