Researchers report a unipolar n-type transistor with a world-leading electron mobility performance of up to 7.16 cm2 V-1 s-1. This achievement heralds an exciting future for organic electronics, ...
FULLER details of the new Westinghouse Electric development of a silicon carbide ransistor capable of operating at above 650 deg.F were given in a paper presented at a mecting in the US of the ...
(Nanowerk News) Researchers at Tokyo Institute of Technology (Tokyo Tech) report a unipolar n-type transistor with a world-leading electron mobility performance of up to 7.16 cm2 V-1 s-1. This ...
FULLER details of the new Westinghouse Electric development of a silicon carbide ransistor capable of operating at above 650 deg.F were given in a paper presented at a mecting in the US of the ...
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