Recent developments in IGBT and FWD (free wheeling diode) devices are enabling designers to achieve higher switching performance, lower electrical losses, and higher temperature operation in high ...

Semikron has added a new topology for use in three-level inverters to its Semitop IGBT product range. The topology is designed to integrate IGBT technology with lower switching and conduction losses ...

Although they require more complex circuits, three-level inverters are more efficient than their two-level cousins. Effective partitioning simplifies implementation of the three-level configuration.

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...

Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...