Basic radiation damage mechanisms in semiconductor devices are described and specifically linked to electronic parameter changes in detectors, transistors and integrated circuits.

2025年5月15日 · Complementary metal-oxide-semiconductor (CMOS) integrated circuits operating at (sub) terahertz frequencies ranging from 0.1 through 10 THz are of increasing …

Figure 3. 15: Two silicon radiation sensors (a) and (b) have different detector capacitance of 0.65 pF and 16.25 pF used for verifying the detector capacitance compensation technique.

2023年6月6日 · This article presents the design and implementation of a radiation-hardened analog front-end (AFE) integrated circuit (IC) developed for interfacing with solid state ionizing …

For decades, we have been developing low‐noise, low-power, and mixed-signal ASICs for particle detectors, high-resolution x-ray and gamma-ray spectrometers, and high-rate photon counters …

Our work investigates a new technique in employing integrated circuits (ICs) as a new type of radiation detection media. As IC technology has advanced circuits on these chips are …

2025年7月10日 · Unlike general-purpose integrated circuits, ASICs are customized for the unique requirements of radiation detection, such as handling high-energy particle interactions and …