The MMA:PMMA bilayer electron beam resist system can produce nanoscale structures with clean edges via lift-off. This happens because the same process that produces patterns in …

Sep 21, 2012 · For the lift-off of high-resolution structures in a two-layer process, PMMA resists (90K and 200K) were adjusted to yield a film thickness of 90 nm to 100 nm. This resist system …

MMA / PMMA resists PMMA (poly methyl methacrylate) and MMA (8.5) (methyl methacrylate) are positive ebeam resists consisting of long polymer chain of carbon atoms which comes in …

May 1, 2008 · A HSQ/PMMA bilayer resist system, in which HSQ as negative tone electron beam resist top layer and PMMA as bottom layer, has been investigated for negative tone lift-off …

The bilayer of widely available PMMA/P(MMA 8.5 MAA) resists helps to achieve an undercut profile without any other steps than the develop-ment itself. A resolution of 50 nm was …

Introduction The information below is intended for those looking for a lift-off procedure with EBL patterning, typically aiming at feature sizes smaller than 2 μm (nominal lower limit for the …

Technological steps of the whole process are shown in Figure 2. Figure 2 Adjusted lift-off process used for thick metallic microstructures preparation. a) PMMA coating and baking, b) SU-8 …

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The structure of our device composed of silicon/Patterned PMMA (~200 nm)/ALD Al2O3 (~40 nm). I have tried to dip the device in acetone to do lift-off but the Al2O3 layer on the entire …