Simulating Radiation-Induced Shifts in MOSFET Threshold Voltage Introduction Irradiation by energetic particles can degrade semiconductor device performance. The particles involved can …

Recently, substantial progress has been made in understanding heavy-ion effects on SiC power devices. The modes of damage will be examined with reference to the underlying mechanisms. …

Abstract: In this article, we investigate the single-event effects (SEEs) leading to single-event burnout (SEB) in β -Ga2O3 MOSFETs. Using Silvaco TCAD, 2-D simulations were performed to …

Feb 1, 2024 · The review aims to analyze in detail how radiation affects these parameters and the resulting consequences for SiC MOSFET performance. By exploring the effects of various …

Design and Analysis of MOSFET Characteristics using Silvaco TCAD In this project, I have developed a MOSFET in TCAD Silvaco and analyzed various parameters of the MOSFET. I have …

Radiation Effects on the Power MOSFET for Space Applications ABSTRACT⎯The electrical characteristics of solid state devices such as the bipolar junction transistor (BJT), metal-oxide …

The Simulation Standard article “Simulating Radiation-Induced Shifts in MOSFET Threshold Voltage”1 gives a brief overview of the ways that ionizing radiation can affect semiconductor …

II. DEVICE DESIGN This research illustrates the transient performance of N-channel silicon carbide (4H-SiC) power MOSFET rated for a blocking voltage of 1200V and drain current density of …

Power MOSFETs, regardless of structure, are susceptible to radiation damage from total ionizing dose (TID) and single-event effects (SEEs), including single-event gate rupture (SEGR) and …

were simulated with respect to radiation influence. The analysis of published works shows that in most projects for BJTs/HBTs and MOSFETs the universal commercial TCAD software tools …